data sheet 1 05.99 type ordering code tape and reel information pin configurat ion marking package 123 bss 129 q62702-s015 e6288: 1500 pcs/reel; 2 reels/carton; gate first g d s ss 129 to-92 bss 129 q67000-s116 e6296: 1500 pcs/reel; 2 reels/carton; source first maximum ratings parameter symbol values unit drain-source voltage v ds 240 v drain-gate voltage, r gs = 20 k w v dgr 240 gate-source voltage v gs 20 esd sensitivity (hbm) as per mil-std 883 C class 1 continuous drain current, t a = 37 ?c i d 0.15 a pulsed drain current, t a = 25 ?c i d puls 0.45 max. power dissipation, t a = 25 ?c p tot 1.0 w operating and storage temperature range t j , t stg C 55 + 150 thermal resistance, chip-ambient (without heat sink) r thja 125 k/w din humidity category, din 40 040 C e C iec climatic category, din iec 68-1 C 55/150/56 sipmos a small-signal transistor 1 2 3 l v ds 240 v l i d 0.15 a l r ds(on) 20 w l n channel l depletion mode l high dynamic resistance l available grouped in v gs(th) ?c bss 129
bss 129 data sheet 2 05.99 electrical characteristics at t j = 25 ?c, unless otherwise specified. parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs = - 3 v, i d = 0.25 ma v (br)dss 240 C C v gate threshold voltage v ds = 3 v, i d = 1 ma v gs(th) - 1.8 - 1.2 - 0.7 drain-source cutoff current v ds = 240 v, v gs = - 3 v t j = 25 ?c t j = 125 ?c i dss C C C C 100 200 na m a gate-source leakage current v gs = 20 v, v ds = 0 i gss C 10 100 na drain-source on-resistance v gs = 0 v, i d = 0.014 a r ds(on) C 7.0 20 w dynamic characteristics forward transconductance v ds 3 2 i d r ds(on)max , i d = 0.25 a g fs 0.14 0.2 C s input capacitance v gs = 0, v ds = 25 v, f = 1 mhz c iiss C 110 150 pf output capacitance v gs = 0, v ds = 25 v, f = 1 mhz c oss C2030 reverse transfer capacitance v gs = 0, v ds = 25 v, f = 1 mhz c rss C710 turn-on time t on , ( t on = t d(on) + t r ) t d(on) C46ns v dd =30v, v gs = - 2 v ... + 5 v, r gs =50 w , i d = 0.25 a t r C1015 turn-off time t off , ( t off = t d(off) + t f ) t d(off) C1520 v dd =30v, v gs = - 2 v ... + 5 v, r gs =50 w , i d = 0.25 a t f C2535
bss 129 data sheet 3 05.99 1) a specific group cannot be ordered seperately. each reel only contains transistors from one group. electrical characteristics (contd) at t j = 25 ?c, unless otherwise specified. parameter symbol values unit min. typ. max. reverse diode continuous reverse drain current t a = 25 ?c i s C C 0.15 a pulsed reverse drain current t a = 25 ?c i sm C C 0.45 diode forward on-voltage i f = 0.3 a, v gs = 0 v sd C 0.7 1.4 v v gs(th) grouping symbol limit values unit test condition min. max. range of v gs(th) d v gs(th) C 0.2 v C threshold voltage selected in groups 1) : f g a b c d v gs(th) C 1.600 C 1.700 C 1.800 C 1.900 C 2.000 C 2.100 C 1.400 C 1.500 C 1.600 C 1.700 C 1.800 C 1.900 v v v v v v v ds1 = 0.2 v; v ds2 = 3 v; i d = 10 m a
bss 129 data sheet 4 05.99 characteristics at t j = 25 ?c, unless otherwise specified. total power dissipation p tot = f ( t a ) typ. output characteristics i d = f ( v ds ) parameter: t p = 80 m s safe operating area i d = f ( v ds ) parameter: d = 0.01, t c = 25 ?c typ. drain-source on-resistance r ds(on) = f ( i d ) parameter: v gs
bss 129 data sheet 5 05.99 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 m s, v ds 3 2 i d r ds(on)max. drain-source on-resistance r ds(on) = f ( t j ) parameter: i d = 0.014 a, v gs = 0 v, (spread) typ. forward transconductance g fs = f ( i d ) parameter: v ds 3 2 i d r ds(on)max. , t p = 80 m s typ. capacitances c = f ( v ds ) parameter: v gs = 0, f = 1 mhz
bss 129 data sheet 6 05.99 gate threshold voltage v gs(th) = f ( t j ) parameter: v ds = 3 v, i d = 1 ma, (spread) drain current i d = f ( t a ) parameter: v gs 3 3 v forward characteristics of reverse diode i f = f ( v sd ) parameter: t p = 80 m s, t j , (spread) drain-source breakdown voltage v (br) dss = b v (br)dss (25 ?c)
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